| PART |
Description |
Maker |
| ADP2102YCPZ-0.8-R7 ADP2102YCPZ-1.5-R7 ADP2102-15 |
SWITCHING REGULATOR, 3000 kHz SWITCHING FREQ-MAX, QCC16 3 X 3 MM, ROHS COMPLIANT, LFCSP-16
Low Duty Cycle, 600 mA, 3 MHz Synchronous Step-Down DC-to-DC Converter SWITCHING REGULATOR, 3000 kHz SWITCHING FREQ-MAX, QCC16
|
Analog Devices, Inc.
|
| IDT71V2576S IDT71V2578S IDT71V2578YS150BG IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PBGA119
IC LOGIC 3253 LOW-VOLTAGE DUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER -40 85C TSSOP-16 96/TUBE 256K X 18 CACHE SRAM, 4.2 ns, PBGA119
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 5K/REEL-13 128K X 36 CACHE SRAM, 4.2 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出，脉冲计数器，单周期取消
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PQFP100
IC LOGIC 3257 LOW-VOLTAGE 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER -40 85C QSOP-16 97/TUBE
|
http://
Integrated Device Technology, Inc.
|
| AT34C02B |
2K, 2-wire Bus Serial EEPROM with permanent software write protection and reversible software write protection.
|
Atmel
|
| AT34C02BN-10SU-1.7 AT34C02B-14 |
Two-wire Serial EEPROM with Permanent and Reversible Software Write Protect 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Hardware Write Protection for the Entire Array
|
Atmel, Corp.
ATMEL Corporation
|
| SSI32R5111M-8CL SSI32R5111R-4CL SSI32R5111RM-6CL |
8-Channel Disk Read/Write Circuit 8通道磁盘写电
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
6-Channel Read/Write Circuit 6通道写电
|
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
256K (32K x 8) Static RAM
256 Kb (256K x 1) Static RAM
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| MAX1836 MAX1836EUT33 MAX1836EUT33-T MAX1836EUT50 M |
CHOKE COIL 100UH 600MA SMD
24V Internal Switch / 100% Duty Cycle / Step-Down Converters
From old datasheet system
DC/DC CONVERTER, 3.3V,BICMOS,TSOP,6PIN
"24V Internal Switch, 100% Duty Cycle, Step-Down Converters"
|
Maxim Integrated Products, Inc.
Maxim Integrated Products Inc
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| IS61VPS102418A-250B2I IS61LPS102418A-200B2 IS61VPS |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solu...
|
| 24LCS52 24LC52-IP 24LC52-ISN 24LC52-IST 24LC52-P 2 |
2K 2.5V I 2 C Serial EEPROM with Software Write Protect 2K 2.5VI 2 C串行EEPROM，带有软件写保护
2K 2.5V I 2 C Serial EEPROM with Software Write Protect
2K2.5VI2CSerialEEPROMwithSoftwareWriteProtect
|
MicrochipTechnology
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| BH6628AFS |
Magnetic Disk LSIs > FDD read/write amplifier
Read / Write amplifier for FDD
|
ROHM[Rohm]
|
| SSI32R510AR-6CP SSI32R510AR-6CH SSI32R510AR-6CL SS |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Electronic Theatre Controls, Inc.
|
|
